| PART |
Description |
Maker |
| SD1565 2841 2SD1565 |
UHF PULSED APPLICATIONS RF & MICROWAVE TRANSISTORS(106.77 k) 超高频射频脉冲应
RF & MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS
From old datasheet system
|
Infineon Technologies AG
STMICROELECTRONICS[STMicroelectronics]
|
| 0405-1000M1 |
1000 Watts - 40 Volts, 300楼矛s, 10% UHF Pulsed Radar 400 - 450 MHz
1000 Watts - 40 Volts, 300μs, 10% UHF Pulsed Radar 400 - 450 MHz
|
Microsemi Corporation
|
| AN561 |
WIDE BAND DESIGN OF PULSED POWER UHF AMPLIFIERS
|
SGS Thomson Microelectronics
|
| HN3C02FU E002001 |
NPN EPITAXIAL PLANAR TYPE (TV TUNER, UHF CONVERTER, UHF RF AMPLIFIER APPLICATIONS)
From old datasheet system
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 2SC3121 |
Transistor Silicon NPN Epitaxial Planar Type TV Tuner, UHF Oscillator Applications (common base) TV Tuner, UHF Converter Applications (common base)
|
TOSHIBA
|
| 2SC5488A |
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
VHF to UHF Wide-Band Low-Noise Amplifier Applications
|
Sanyo Semicon Device
|
| 1SV247 0012 |
PIN Diode for VHF, UHF, AGC Applications Silicon Epitaxial Type
From old datasheet system
PIN Diode for VHF/ UHF/ AGC Applications
|
Sanyo Semicon Device
|
| 1SV250 0015 |
PIN Diode for VHF, UHF, AGC Applications Silicon Epitaxial Type
From old datasheet system
PIN Diode for VHF/ UHF/ AGC Applications
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
| BAT17-04W BAT17-05W BAT17-06W Q62702-A1273 Q62702- |
Silicon Schottky Diodes (For mixer applications in the VHF / UHF range For high-speed switching applications)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| 2SC4320 E000939 |
From old datasheet system
VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
NPN EPITAXIAL PLANAR TYPE (VHF~ UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| HVV1214-025 |
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200楼矛s Pulse, 10% Duty for Ground Based Radar Applications
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty for Ground Based Radar Applications
|
HVVi Semiconductors, Inc.
|
| HVV0912-150 HVV0912-150-EK |
L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10μs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications
L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10レs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications
|
HVVi Semiconductors, Inc.
|
